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HGTP2N120BND, HGT1S2N120BNDS
Data Sheet January 2000 File Number 4698.2
12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49310.
Features
* 12A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Thermal Impedance SPICE Model www.intersil.com * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
E
Ordering Information
PART NUMBER HGTP2N120BND HGT1S2N120BNDS PACKAGE TO-220AB TO-263AB BRAND 2N120BND 2N120BND
COLLECTOR (FLANGE)
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S2N120BNDS9A.
Symbol
C
JEDEC TO-263AB
COLLECTOR (FLANGE) G G E
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000
HGTP2N120BND, HGT1S2N120BNDS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTP2N120BND HGT1S2N120BNDS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 300 260 8 15
oC oC
UNITS V A A A V V W W/oC
oC
1200 12 5.6 20 20 30 12A at 1200V 104 0.83 -55 to 150
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 51.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC MIN 1200 6.0 12 TYP 50 2.45 3.6 6.8 10.2 24 32 21 11 185 100 370 195 MAX 250 0.6 2.7 4.2 250 30 39 25 15 240 130 500 270 UNITS V A A mA V V V nA A V nC nC ns ns ns ns J J
Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 2.3A, VGE = 15V
TC = 25oC TC = 150oC
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
VGE(TH) IGES SSOA VGEP QG(ON)
IC = 40A, VCE = VGE VGE = 20V TJ = 150oC, RG = 51, VGE = 15V, L = 400H, VCE(PK) = 1200V IC = 2.3A, VCE = 0.5 BVCES IC = 10A, VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3)
td(ON)I trI td(OFF)I tfI EON EOFF
IGBT and Diode at TJ = 25oC ICE = 2.3A VCE = 0.8 BVCES VGE = 15V RG = 51 L = 5mH Test Circuit (Figure 20)
2
HGTP2N120BND, HGT1S2N120BNDS
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 2.3A IEC = 2.3A, dlEC/dt = 200A/s IEC = 1A, dlEC/dt = 200A/s Thermal Resistance Junction To Case RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 2.3A VCE = 0.8 BVCES VGE = 15V RG = 51 L = 5mH Test Circuit (Figure 20) MIN TYP 25 11 195 160 725 280 52 38 MAX 30 15 260 200 1000 380 3.2 60 44 1.20 2.5 UNITS ns ns ns ns J J V ns ns
oC/W oC/W
Typical Performance Curves
12 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A) 14 12 10 8 6 4 2 0 TJ = 150oC, RG = 51, VGE = 15V, L = 1mH
VGE = 15V 10 8 6 4 2 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150
0
200 400 600 800 1000 1200 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
HGTP2N120BND, HGT1S2N120BNDS Typical Performance Curves
fMAX, OPERATING FREQUENCY (kHz)
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (s) VCE = 840V, RG = 51, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) 7 5 25 40
TJ = 150oC, RG = 51, L = 5mH, V CE = 960V
TC = 75oC, VGE = 15V, IDEAL DIODE 100 TC 75oC 75oC VGE 15V 12V
20 tSC ISC
35
50 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) VGE PC = CONDUCTION DISSIPATION TC (DUTY FACTOR = 50%) 110oC 15V oC/W, SEE NOTES oC 12V ROJC = 1.2 110 0.5
15
30
10
25
10
5 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V)
20
1.0 2.0 ICE, COLLECTOR TO EMITTER CURRENT (A)
5.0
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
10 TC = -55oC 8 TC = 25oC
8 TC = 25oC 6 TC = -55oC
6 TC = 150oC 4
4 TC = 150oC 2 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250s 0 0 1 2 3 4 5 6 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 7
2 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 0 0 1 2 3 4 5 6
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
2.0 EON, TURN-ON ENERGY LOSS (mJ) EOFF, TURN-OFF ENERGY LOSS (J) RG = 51, L = 5mH, VCE = 960V 1.5
400 RG = 51, L = 5mH, VCE = 960V 350 300 250 200 150 100 50 0 0 1 2 3 4 TJ = 25oC, VGE = 12V OR 15V TJ = 150oC, VGE = 12V OR 15V
TJ = 150oC, VGE = 12V, VGE = 15V
1.0
0.5 TJ = 25oC, VGE = 12V, VGE = 15V 0 0 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
4
HGTP2N120BND, HGT1S2N120BNDS Typical Performance Curves
45 RG = 51, L = 5mH, VCE = 960V tdI , TURN-ON DELAY TIME (ns) 40 35 30 25 20 TJ = 25oC, TJ = 150oC, VGE = 15V 15 0 1 2 3 4 5 35 TJ = 25oC, TJ = 150oC, VGE = 12V trI , RISE TIME (ns) 30 25 20 15 10 5 0 0 1 3 4 2 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 TJ = 25oC OR TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 12V
Unless Otherwise Specified (Continued)
40 RG = 51, L = 5mH, VCE = 960V
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
450 td(OFF)I , TURN-OFF DELAY TIME (ns) 400 350 300 250 200 150 100 0
RG = 51, L = 5mH, VCE = 960V
400 350 300 250
RG = 51, L = 5mH, VCE = 960V
VGE = 12V, VGE = 15V, TJ = 150oC
tfI , FALL TIME (ns)
TJ = 150oC, VGE = 12V OR 15V 200 150 100 50
VGE = 12V, VGE = 15V, TJ = 25oC 3 2 1 4 ICE , COLLECTOR TO EMITTER CURRENT (A) 5
TJ = 25oC, VGE = 12V OR 15V 0 1 2 3 4 5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
30 25 20 15 10 5 0 7 8 9 10 11 12 13 14 15 VGE, GATE TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 20V PULSE DURATION = 250s
20
IG (REF) = 1mA, RL = 260, TC = 25oC
15
VCE = 1200V
10 VCE = 400V 5 VCE = 800V
TC = 25oC TC = 150oC
TC = -55oC
0
0
5
10
20 25 15 QG , GATE CHARGE (nC)
30
35
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
5
HGTP2N120BND, HGT1S2N120BNDS Typical Performance Curves
0.8 CIES C, CAPACITANCE (nF) 0.6
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A) 3.0 2.5 2.0 1.5 VGE = 10V 1.0 0.5 0 DUTY CYCLE < 0.5%, TC = 110oC PULSE DURATION = 250s
FREQUENCY = 1MHz
VGE = 15V
0.4
0.2
COES CRES
0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
ZJC , NORMALIZED THERMAL RESPONSE
100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 10-2 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 100 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
70 10 IF, FORWARD CURRENT (A) t, RECOVERY TIMES (ns) 60 50 40 30 TC = 25oC, dIEC / dt = 200A/s
trr
150oC 1
ta
25oC 0.1 0.5 1.0 -55oC 1.5 VF, FORWARD VOLTAGE (V) 2.0 2.5
tb
20 10 0 1 2 3 4 5 IF, FORWARD CURRENT (A)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
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HGTP2N120BND, HGT1S2N120BNDS Test Circuit and Waveforms
HGTP2N120BND 90% VGE EOFF L = 5mH RG = 51 + ICE VDD = 960V VCE 90% 10% td(OFF)I tfI trI td(ON)I 10% EON
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 7
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